Soft laser sputtering of InP(100) surface
Identifieur interne : 01D207 ( Main/Repository ); précédent : 01D206; suivant : 01D208Soft laser sputtering of InP(100) surface
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Abstract
Laser sputtering of InP(100) surface with 337 nm photons was investigated for fluences ranging from the threshold for particle emission up to about 370 mJ/cm2. Sputtered atoms and molecules are detected during their flight using resonant laser post-ionization and mass spectrometry. From the shot number and the energy dependencies of the sputtering yield, it is shown that two sputtering regimes exist. For low fluence values (<190 mJ/cm2), the sputtering results mainly from absorption and excitation of defect sites. Conversely, at higher fluences, interband transitions in the whole absorption volume lead after relaxation to a process similar to thermal evaporation. This thermal-like process induces the preferential emission of phosphorus in the form of atoms and molecules and the quite different velocities of phosphorus and indium populations which in absence of collisions separate during their flight. The limit between the two regimes might correspond to the point where melting of the surface occurs. © 1994 American Institute of Physics.
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Gibert</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Groupe de Recherches sur l'Energétique des Milieux Ionisés, URA CNRS, Université d'Orléans, BP 6744, 45067, Orléans Cedex 2, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe de Recherches sur l'Energétique des Milieux Ionisés, URA CNRS, Université d'Orléans, BP 6744, 45067, Orléans Cedex 2</wicri:regionArea><wicri:noRegion>Orléans Cedex 2</wicri:noRegion><wicri:noRegion>Orléans Cedex 2</wicri:noRegion><orgName type="university">Université d'Orléans</orgName><placeName><settlement type="city">Orléans</settlement><region type="region" nuts="2">Région Centre</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">94-0688180</idno><date when="1994-12-01">1994-12-01</date><idno type="stanalyst">PASCAL 94-0688180 AIP</idno><idno type="RBID">Pascal:94-0688180</idno><idno type="wicri:Area/Main/Corpus">01DA17</idno><idno type="wicri:Area/Main/Repository">01D207</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. Appl. Phys.</title><title level="j" type="main">Journal of Applied Physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ablation</term><term>Energy dependence</term><term>Experimental study</term><term>Indium phosphides</term><term>Interband transitions</term><term>Laser-radiation heating</term><term>Mass spectra</term><term>Melting</term><term>Sputtering</term><term>Surface treatments</term><term>Ultraviolet radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>7920D</term><term>8280M</term><term>8160C</term><term>Indium phosphure</term><term>Pulvérisation irradiation</term><term>Chauffage laser</term><term>Ablation</term><term>Rayonnement UV</term><term>Traitement surface</term><term>Spectre masse</term><term>Influence énergie</term><term>Transition interbande</term><term>Fusion</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Laser sputtering of InP(100) surface with 337 nm photons was investigated for fluences ranging from the threshold for particle emission up to about 370 mJ/cm<sup>2</sup>. Sputtered atoms and molecules are detected during their flight using resonant laser post-ionization and mass spectrometry. From the shot number and the energy dependencies of the sputtering yield, it is shown that two sputtering regimes exist. For low fluence values (<190 mJ/cm<sup>2</sup>), the sputtering results mainly from absorption and excitation of defect sites. Conversely, at higher fluences, interband transitions in the whole absorption volume lead after relaxation to a process similar to thermal evaporation. This thermal-like process induces the preferential emission of phosphorus in the form of atoms and molecules and the quite different velocities of phosphorus and indium populations which in absence of collisions separate during their flight. The limit between the two regimes might correspond to the point where melting of the surface occurs. © 1994 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. Appl. 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Sputtered atoms and molecules are detected during their flight using resonant laser post-ionization and mass spectrometry. From the shot number and the energy dependencies of the sputtering yield, it is shown that two sputtering regimes exist. For low fluence values (<190 mJ/cm<sup>2</sup>), the sputtering results mainly from absorption and excitation of defect sites. Conversely, at higher fluences, interband transitions in the whole absorption volume lead after relaxation to a process similar to thermal evaporation. This thermal-like process induces the preferential emission of phosphorus in the form of atoms and molecules and the quite different velocities of phosphorus and indium populations which in absence of collisions separate during their flight. 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